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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1999.11.01 Revised Date : 2000.11.01 Page No. : 1/5 HSK2474I N - Channel MOSFETs Description * Dynamic dv/dt Rating * Repetitive Avalanche rated * Surface Mount * Straigh Lead * Available in Tape&Reel * Fast Switching * Ease of Paralleling Features * Low Drain-Source ON Resistance - RDS(ON)=1.2(Typ.)@ VDS=10V, ID=1.3A * High Forward Transfer Admittance -|Yfs|=1.2S@VDS=50V, ID=1.3A * Low Leakage Current - IDSS=100uA (Max.)@VDS=200V * Enhancement-Mode - Vth = 2.0~4.0V@VDS=4V, ID=250uA Absolute Maximum Ratings (Ta=25C) * Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature .................................................................................................... +150 C * Maximum Power Dissipation Total Power Dissipation (Tc=25C) .................................................................................... 25 W * Maximum Voltages and Currents Drain to Source Breakdown Voltage ................................................................................. 250 V Drain to Gate Breakdown Voltage..................................................................................... 250 V Gate to Source Voltage.................................................................................................... 20 V Drain Current (Cont.) ......................................................................................................... 2.2 A Drain Current (Pluse.)........................................................................................................ 8.8 A Thermal Characteristics Characteristic Junction to Case Junction to Ambient Symbol RJC RJA Max. 5 50 Units C/W C/W HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Electrical Characteristics (Ta=25C) Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Forward Transconductance Drain-Source ON Resistance Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Time Total Gate Charge (Gate-Source Plus Gate-Drain) Gate-Source Charge Gate-Drain Charge (Miller) Symbol V(BR)DSS VGS(th) IDSS IGSS gfs RDS(ON) Ciss Crss Coss tr ton tf Toff Qg Qgs Qgd Min. 250 2.0 0.80 Typ. 1.2 1.2 280 30 42 45 30 45 135 Max. 4.0 25 100 2.0 8.2 1.8 4.5 Unit V V uA uA pF pF pF nS Spec. No. : Preliminary Data Issued Date : 1999.11.01 Revised Date : 2000.11.01 Page No. : 2/5 Test Conditions ID=250uA VDS=4V, ID=250uA VDS=200V VGS=20V VDS=50V,ID=1.3A VGS=10V, ID=1.3A VDS=10V, VGS=0V f=1.0MHz VDD=100V, ID=1.0A RG=24, RD=45 nC nC nC ID=2.7A, VDS=200V VGS=10V HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve On-Region Characteristic 7 VGS=10V 6 ID, Drain-Source Current (A) 5 VGS=6V 4 3 2 VGS=4V 1 VGS=2V 0 0 1 2 3 4 5 6 7 VDS,Drain-Source Voltage (V) 8 9 10 0.95 20 40 VGS=8V BVDSS, Normalized Drain-Source Breakdown Voltage 1.13 1.11 1.09 1.07 1.05 1.03 1.01 0.99 0.97 1.15 Spec. No. : Preliminary Data Issued Date : 1999.11.01 Revised Date : 2000.11.01 Page No. : 3/5 Breakdown Voltage Variation with Temperature 60 80 Tc, Case Temperature (C) 100 On Resistance Variation with Temperature 2.5 VGS=10V RDS(on), Drain-Source On-Resistance (ohm) RDS(on), Drain-Source On-Resistance (ohm) 2.3 2.1 1.9 ID=1.3A 1.7 1.5 1.3 1.1 0.9 25 35 45 55 65 75 85 95 Tc, Case Temperature (C) 105 115 125 2.0 1.8 Typical On-Resistance & Drain-Current VGS=6V 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 5 6 7 ID, Drain-Source Current (A) 8 9 10 VGS=10V Transconductance Variation with Drain Current & Temperature 5 VDS=10V GFS,Transconductance (S) ID, Drain-source Current (A) 4 Tc=25C 3 Tc=100C 2 4 5 Drain Current Variation with Gate Voltage & Temperature VDS=10V TC=100C 3 Tc=25C 2 1 1 0 0 1 2 3 4 5 6 ID, Drain-Source Current (A) 7 8 0 0 1 2 3 4 5 6 VGS, Gate-Source Votltage(V) 7 8 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1999.11.01 Revised Date : 2000.11.01 Page No. : 4/5 RDSON(Temp) 2.5 VGS=10V RDS(on),Normalized Drain-Source On Resistance (ohm) 2.0 IS, Reverse Drain Current (A) Tc=100C 1.5 Tc=25C 1.0 10 9 Body Diode Forward Voltage Variation with Current & Temperature Tc=100C 8 7 6 5 4 3 2 1 Tc=25C 0.5 0.0 0 1 2 3 4 5 6 7 ID, Drain-Source Current (A) 8 9 10 0 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VSD, Body Diode Forward Voltage (V) Capacitance Characteristices 1000 Ciss Capacitance (pF) 100 Coss Crss 10 1 0.1 1 10 VDS, Drain-Source Voltage (V) 100 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-251 Dimension Marking : HSMC Logo Spec. No. : Preliminary Data Issued Date : 1999.11.01 Revised Date : 2000.11.01 Page No. : 5/5 A B C D Product Series Rank Part Number Date Code Ink Mark F 3 I E K 2 1 G Style : Pin 1.Gate 2.Drain 3.Source H J 3-Lead TO-251 Plastic Package HSMC Package Code : I *:Typical DIM A B C D E F Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2520 0.2677 0.2677 0.2835 Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.40 6.80 6.80 7.20 DIM G H I J K Inches Min. Max. 0.2559 *0.1811 0.0354 0.0315 0.2047 0.2165 Millimeters Min. Max. 6.50 *4.60 0.90 0.80 5.20 5.50 Notes : 1.Dimension and tolerance based on our Spec. dated May. 24,1995. 2.Controlling dimension : millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material : * Lead : 42 Alloy ; solder plating * Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory : * Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 * Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5983621~5 Fax : 886-3-5982931 * Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5977061 Fax : 886-3-5979220 HSMC Product Specification |
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